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Proceedings Paper

High-power laser-produced plasma source for nanolithography
Author(s): Richard Alan Forber; Celestino J. Gaeta; Harry Rieger; Heinz Siegert; Scott McLeod; Brent E. Boerger
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Paper Abstract

JMAR develops Laser-Produced Plasma (LPP) sources for lithography applications, and has specifically developed Collimated laser-Plasma Lithography (CPL) as a 1 nm collimated point source and stepper system to address sub-100nm lithography needs. We describe the CPL source development, show demonstrated sub-100nm printing capability, and describe status of a beta lithography tool. The system will be power-scaled to address silicon device contacts and vias at 90nm and below. This development has much in common with LPP Extreme UltraViolet Lithography (EUVL) sources; an EUV source concept is presented to address the high power requirements of that Next Generation Lithography (NGL).

Paper Details

Date Published: 7 January 2004
PDF: 12 pages
Proc. SPIE 5196, Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications, (7 January 2004); doi: 10.1117/12.514053
Show Author Affiliations
Richard Alan Forber, JMAR Technologies, Inc. (United States)
Celestino J. Gaeta, JMAR Technologies, Inc. (United States)
Harry Rieger, JMAR Technologies, Inc. (United States)
Heinz Siegert, JMAR Technologies, Inc. (United States)
Scott McLeod, JMAR Technologies, Inc. (United States)
Brent E. Boerger, JMAR Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 5196:
Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications
George A. Kyrala; Jean-Claude J. Gauthier; Carolyn A. MacDonald; Ali M. Khounsary, Editor(s)

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