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Proceedings Paper

Ti/TiOx/Ti laternal tunnel junctions for single electron transistor
Author(s): L. V. Litvin; Vladimir Kolosanov; D. G. Baksheev; V. A. Tkachenko; K. P. Mogilnikov; A. G. Cherkov; A. L. Aseev
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Paper Abstract

A new technique for formation of tunnel junctions from Ti stripe providing junction capacitance of about 10 aF (150 nm wide stripe) has been developed. The technique is based on through oxidizing thin sites that form when Ti stripe crosses a step previously etched in the dielectric substrate. Charge transfer through the single junctions was investigated. Inelastic tunneling via electron states localized in the barrier region was found. This results in the essential nonlinearity of junction I-V curves to a scale of bias voltage of 2 - 3 mV. The single electron transistor built on such junctions demonstrates the I-V curves peculiarities originating from strong nonlinearity of single junctions.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513920
Show Author Affiliations
L. V. Litvin, Institute of Semiconductor Physics (Russia)
Vladimir Kolosanov, Institute of Semiconductor Physics (Russia)
D. G. Baksheev, Institute of Semiconductor Physics (Russia)
V. A. Tkachenko, Institute of Semiconductor Physics (Russia)
K. P. Mogilnikov, Institute of Semiconductor Physics (Russia)
A. G. Cherkov, Institute of Semiconductor Physics (Russia)
A. L. Aseev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology

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