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Proceedings Paper

Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold
Author(s): I. N. Kotel'nikov; S. E. Dizhur; F. V. Shtrom
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Paper Abstract

A remarkable change of LO-phonon line for tunneling from metal to 2DEG, in comparison with 3D-case, was observed. It was shown that the line shapes and the amplitudes of LO-phonon and zero-bias anomaly in tunneling spectra of Al/δ-GaAs junctions depended on magnetic field in-plane of the 2DEG. The parameters of the lines were changed when threshold for resonant intersubband polaron in δ-layer was exceeded.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513913
Show Author Affiliations
I. N. Kotel'nikov, Institute of Radioengineering and Electronics (Russia)
S. E. Dizhur, Institute of Radioengineering and Electronics (Russia)
F. V. Shtrom, Institute of Radioengineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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