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Proceedings Paper

Influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dots
Author(s): V. A. Gaisin; A. Kh. Akopyan; B. S. Kulinkin; B. V. Novikov; V. N. Petrov; Victor M. Ustinov; G. E. Cirlin
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Paper Abstract

The temperature dependencies of luminescence spectra of the InAs/GaAs quantum dots L0 (EL0 = 1.235 eV), L1 (EL1 = 1.290 eV) and I1 (EI1 = 1.343 eV) and wettings layer (WL) (EWL = 1.408 eV) have been investigated at P = 0 and P = 15 kbar. The InAs quantum dots on vicinal substrates GaAs at misorientation angle 7° [001] have been grown in submonolayer migration enhanced epitaxy mode (SMEE). The activation energies have been determined from the temperature quenching of luminescence. Their dependence on a value of hydrostatic pressure have been studied. The available scheme of energy levels of quantum dots has been proposed.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513865
Show Author Affiliations
V. A. Gaisin, St. Petersburg State Technical Univ. (Russia)
A. Kh. Akopyan, St. Petersburg State Technical Univ. (Russia)
B. S. Kulinkin, St. Petersburg State Technical Univ. (Russia)
B. V. Novikov, St. Petersburg State Technical Univ. (Russia)
V. N. Petrov, Institute of Analitycal Instrumentation (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
G. E. Cirlin, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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