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Proceedings Paper

Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures
Author(s): B. H. Bairamov; B. P. Zakharchenya; V. V. Toporov; V. A. Voitenko; F. B. Bairamov; Mohamed Henini
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Paper Abstract

We obtain inelastic electronic light scattering for interband transitions between valence-band states of GaAs layer embedded by self-assembled InAs quantum dots (QDs). Under a low-power selective cw excitation above the InAs band gap but below that of GaAs at a lattice temperature Tl = 5.1 K we find anomalous photoexcitation of carriers in the InAs QDs. Unusual photoinjection of the carriers to the GaAs barrier via strong Coulomb interactions results in creation of the nonequilibrium electron-hole plasma in the GaAs layer with density of n = p = 2.5 x 1018 cm-3 and an electron temperature Te = 25 K. Observed spectra reflects the band anisotropy and extends from zero to rather large frequency shifts with a long tail with a peak at about 300 - 400 cm-1 in good agreement with theoretical prediction.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513861
Show Author Affiliations
B. H. Bairamov, A.F. Ioffe Physico-Technical Institute (Russia)
B. P. Zakharchenya, A.F. Ioffe Physico-Technical Institute (Russia)
V. V. Toporov, A.F. Ioffe Physico-Technical Institute (Russia)
V. A. Voitenko, A.F. Ioffe Physico-Technical Institute (Russia)
F. B. Bairamov, A.F. Ioffe Physico-Technical Institute (Russia)
Mohamed Henini, Univ. of Nottingham (United Kingdom)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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