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Proceedings Paper

Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences
Author(s): A. V. Baranov; V. G. Davydov; Anatoli V. Fedorov; H.-W. Ren; Shigeo Sugou; Yasuaki Masumoto
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Paper Abstract

Unusual coupling of heterostructure optical phonons and electronic excitations in quantum dots (QD's) was observed by photoluminescence spectroscopy in strain-induced InGaAs/GaAs QD's (SIQD's) and self-assembled InAs/GaAs QD's (SAQD's). Phonon-assisted interband transitions in SIQD's were found to be governed by zone center bulk GaAs TO and LO phonons via deformation potential interaction, whereas polar interaction was inessential. For SAQD's, a n-doped GaAs substrate was found to effect on QD intraband relaxation of carriers via coupling between them and substrate LO-phonon-plasmon modes at spacing between QD's and substrate as long as 100 nm.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513860
Show Author Affiliations
A. V. Baranov, S.I. Vavilov State Optical Institute and JST Corp. (Russia)
V. G. Davydov, S.I. Vavilov State Optical Institute and JST Corp. (Russia)
Anatoli V. Fedorov, S.I. Vavilov State Optical Institute (Russia)
H.-W. Ren, NEC Corp. and Japan Science and Technology Corp. (Japan)
Shigeo Sugou, NEC Corp. (Japan)
Yasuaki Masumoto, Univ. of Tsukuba and Japan Science and Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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