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Proceedings Paper

Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
Author(s): P. N. Brunkov; A. Patane; A. Levin; Laurence Eaves; P. C. Main; Yu G. Musikhin; Boris V. Volovik; Alexey E. Zhukov; Victor M. Ustinov; S. G. Konnikov
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Paper Abstract

Photocurrent and capacitance spectroscopy are used to investigate a Schottky barrier structure containing a single layer of self-organized InAs/GaAs quantum dots. We show that the temperature dependence of the photocurrent signal from the quantum dots is governed by thermal escape of electrons as the faster carriers.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513859
Show Author Affiliations
P. N. Brunkov, A.F. Ioffe Physico-Technical Institute and Univ. of Nottingham (Russia)
A. Patane, Univ. of Nottingham (United Kingdom)
A. Levin, Univ. of Nottingham (United Kingdom)
Laurence Eaves, Univ. of Nottingham (United Kingdom)
P. C. Main, Univ. of Nottingham (United Kingdom)
Yu G. Musikhin, A.F. Ioffe Physico-Technical Institute (Russia)
Boris V. Volovik, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
S. G. Konnikov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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