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Proceedings Paper

Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layer
Author(s): E. E. Vdovin; Yu N. Khanin; Yu V. Dubrovskii; Laurence Eaves; P. C. Main; Mohamed Henini; Geoff Hill
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Paper Abstract

We use resonant magnetotunneling spectroscopy, with the magnetic field applied parallel to the interfaces, to investigate the local band structure in the quantum well (QW) of a resonant tunneling diode. By rotating the magnetic field in the plane of the interfaces, we investigate the energy surface at constant k||. Using this technique, we have studied two different types of double barrier structures. We obtain different results depending on whether or not the QW contains a narrow InAs layer.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513844
Show Author Affiliations
E. E. Vdovin, Institute of Microelectronics Technology (Russia)
Yu N. Khanin, Institute of Microelectronics Technology (Russia)
Yu V. Dubrovskii, Institute of Microelectronics Technology (Russia)
Laurence Eaves, Univ. of Nottingham (United Kingdom)
P. C. Main, Univ. of Nottingham (United Kingdom)
Mohamed Henini, Univ. of Nottingham (United Kingdom)
Geoff Hill, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology

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