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Proceedings Paper

Auger recombination in strained InGaAsP quantum wells with Eg=0.7-1.6 eV
Author(s): Z. N. Sokolova; D. I. Gurylev; Nikita A. Pikhtin; Ilya S. Tarasov
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Paper Abstract

Auger coefficients have been measured in five light emitting diodes (LEDs) with strained quantum wells in active region covered a wide range of wavelength. LED were fabricated from identical high efficient laser heterostructures. The obtained Auger coefficients increase from 3 x 10-30 to 1.8 x 10-28 cm6/c as wavelength changes from 0.78 to 1.8 μm.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513820
Show Author Affiliations
Z. N. Sokolova, A.F. Ioffe Physico-Technical Institute (Russia)
D. I. Gurylev, A.F. Ioffe Physico-Technical Institute (Russia)
Nikita A. Pikhtin, A.F. Ioffe Physico-Technical Institute (Russia)
Ilya S. Tarasov, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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