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Proceedings Paper

Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
Author(s): Vladimir Ya. Aleshkin; D. M. Gaponova; Dmitry G. Revin; Leonid E. Vorobjev; S. N. Danilov; Vadim Yu. Panevin; N. K. Fedosov; D. A. Firsov; V. A. Shalygin; Aleksey D. Andreev; Alexey E. Zhukov; N. N. Ledentsov; Victor M. Ustinov; G. E. Cirlin; V. A. Egorov; F. Fossard; Francois H. Julien; Elias Towe; Debdas Pal; S. R. Schmidt; Alois Seilmeier
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Paper Abstract

The results of optical phenomena investigations in quantum dot and quantum well structures under interband optical pumping are presented. Interband and intraband light absorption in nanostructures with quantum dots has been studied experimentally and theoretically. Photoluminescence and interband light absorption in stepped quantum wells have been investigated including PL studies under picosecond optical pumping. Experimental results have been compared with results of calculation of energy spectrum and transition probabilities. It is shown that inversion of population exists between the third and second excited levels of stepped quantum well.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513802
Show Author Affiliations
Vladimir Ya. Aleshkin, Institute for Physics of Microstructures (Russia)
D. M. Gaponova, Institute for Physics of Microstructures (Russia)
Dmitry G. Revin, Institute for Physics of Microstructures (Russia)
Leonid E. Vorobjev, St. Petersburg State Technical Univ. (Russia)
S. N. Danilov, St. Petersburg State Technical Univ. (Russia)
Vadim Yu. Panevin, St. Petersburg State Technical Univ. (Russia)
N. K. Fedosov, St. Petersburg State Technical Univ. (Russia)
D. A. Firsov, St. Petersburg State Technical Univ. (Russia)
V. A. Shalygin, St. Petersburg State Technical Univ. (Russia)
Aleksey D. Andreev, A.F. Ioffe Physico-Technical Institute (Russia)
Univ. of Surrey (United Kingdom)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
N. N. Ledentsov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
G. E. Cirlin, A.F. Ioffe Physico-Technical Institute (Russia)
V. A. Egorov, Institute for Analytical Instrumentation (Russia)
F. Fossard, Univ. Paris-Sud (France)
Francois H. Julien, Univ. Paris-Sud (France)
Elias Towe, Univ. of Virginia (United States)
Debdas Pal, Univ. of Virginia (United States)
S. R. Schmidt, Univ. Bayreuth (Germany)
Alois Seilmeier, Univ. Bayreuth (Germany)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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