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Proceedings Paper

Resonant states of carbon acceptor in p-InGaAs/GaAs-doped quantum well heterostructure
Author(s): D. M. Gaponova; Vladimir Ya. Aleshkin; Vladimir I. Gavrilenko; D. V. Kozlov; V. N. Shastin; R. Kh. Zhukavin; B. N. Zvonkov; E. A. Uskova; J. Niels Hovenier; Alexander F. G. van der Meer
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Paper Abstract

The photocurrent spectra in 27 - 37 μm wavelength range of the InGaAs/GaAs heterostructure with carbon δ-doping on the edge of the quantum wells has been investigated using free electron laser (FELIX). The resonant response has been revealed at the wavelength 34.3 μm. The energy of observed photocurrent peak (approximately 36.2 meV) is in a good agreement with the calculated energy of the hole transition from the ground state to the first excited resonant state of the impurity. The hole relaxation time to the acceptor ground state is estimated.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513756
Show Author Affiliations
D. M. Gaponova, Institute for Physics of Microstructures (Russia)
Vladimir Ya. Aleshkin, Institute for Physics of Microstructures (Russia)
Vladimir I. Gavrilenko, Institute for Physics of Microstructures (Russia)
D. V. Kozlov, Institute for Physics of Microstructures (Russia)
V. N. Shastin, Institute for Physics of Microstructures (Russia)
R. Kh. Zhukavin, Institute for Physics of Microstructures (Russia)
B. N. Zvonkov, Nizhnii Novgorod State Univ. (Russia)
E. A. Uskova, Nizhnii Novgorod State Univ. (Russia)
J. Niels Hovenier, Delft Univ. of Technology (Netherlands)
Alexander F. G. van der Meer, FOM - Institute for Plasma Physics (Netherlands)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology

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