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Proceedings Paper

Monolithic diffractive interference detector on silicon
Author(s): Yves Jourlin; Stephanie Reynaud; Nathalie Destouches; Alexandre V. Tishchenko; Sabine Fourment; Philippe Arguel; Francoise Lozes; Gerard Sarrabayrouse; Jerome Valentin
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Paper Abstract

The presented interference detector comprises a standard pn junction in a silicon substrate and a corrugation grating engraved at its surface. Two beams with unknown phase difference impinge onto the detector under the Littrow condition for some diffraction order of the grating. The detected power exhibits a non-zero AC component as the relative phase between the incident beams changes. The present paper describes the operation principle and brings the evidence of non-zero interference contrast in the application case of a displacement sensor.

Paper Details

Date Published: 19 February 2004
PDF: 6 pages
Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); doi: 10.1117/12.513694
Show Author Affiliations
Yves Jourlin, LTSI-CNRS, Univ. Jean Monnet de Saint-Etienne (France)
Stephanie Reynaud, LTSI-CNRS, Univ. Jean Monnet de Saint-Etienne (France)
Nathalie Destouches, LTSI-CNRS, Univ. Jean Monnet de Saint-Etienne (France)
Alexandre V. Tishchenko, LTSI-CNRS, Univ. Jean Monnet de Saint-Etienne (France)
Sabine Fourment, LAAS-CNRS (France)
Philippe Arguel, LAAS-CNRS (France)
Francoise Lozes, LAAS-CNRS (France)
Gerard Sarrabayrouse, LAAS-CNRS (France)
Jerome Valentin, LAAS-CNRS (France)


Published in SPIE Proceedings Vol. 5251:
Detectors and Associated Signal Processing
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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