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Proceedings Paper

Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge1-xSix/Ge/p-Ge1-xSix quantum well
Author(s): M. V. Yakunin; G. A. Alshanskii; Yu G. Arapov; V. N. Neverov; O. A. Kuznetsov
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Paper Abstract

A negative magnetoresistance (NMR) reaching maximum 30-40% of its zero-field value is observed under in-plane magnetic field for the hole gases confined in wide p-Ge1-xSix/Ge/p-Ge1-xSix quantum wells (QW), while in an analogous narrow QW the magnetoresistance doesn't exceed 1%. In the QWs of intermediate widths and hole densities, the NMR is explained as being caused by suppression of the intersubband scattering due to the upper subband depopulation. In the widest QWs with the highest hole densities the hole gas is self-divided into two 2D sublayers. A similar NMR observed in these samples is interpreted as also been due to suppression of the intersubband scattering, but subbands are the lowest symmetric and antisymmetric states of the formed double quantum well. The main effect of the in-plane magnetic field in this case is a relative shift of subbands along the wave vector, rather than the shift in energy.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513637
Show Author Affiliations
M. V. Yakunin, Institute of Metal Physics (Russia)
G. A. Alshanskii, Institute of Metal Physics (Russia)
Yu G. Arapov, Institute of Metal Physics (Russia)
V. N. Neverov, Institute of Metal Physics (Russia)
O. A. Kuznetsov, Nizhnii Novgorod State Univ. (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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