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Proceedings Paper

About the phosphorus sensitization of silicon quantum dots in SiO2 photoluminescence
Author(s): David I. Tetelbaum; V. A. Burdov; A. N. Mikhaylov; Sergey A. Trushin
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Paper Abstract

The question about the mechanisms of the photoluminescence enhancement of the system of silicon nanocrystals embedded into silica matrix at phosphorus doping is described. Both the experimental and theoretical arguments are presented.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513634
Show Author Affiliations
David I. Tetelbaum, Univ. of Nizhnii Novgorod (Russia)
V. A. Burdov, Univ. of Nizhnii Novgorod (Russia)
A. N. Mikhaylov, Univ. of Nizhnii Novgorod (Russia)
Sergey A. Trushin, Univ. of Nizhnii Novgorod (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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