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Proceedings Paper

Modulation-doped InGaAsP quantum well laser and modulator
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Paper Abstract

An number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise in modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 μm have been theoretically investigated. The results indicate that the relaxation oscillation frequency for p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers. The linewidth enhancement factor of p-type modulation doped QW laser is reduced to ½ of that of undoped MQW laser and the relative intensity noise (RIN) is reduced by a factor of > 10 dB compared to that for undoped MQW lasers.

Paper Details

Date Published: 14 August 2003
PDF: 12 pages
Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); doi: 10.1117/12.513627
Show Author Affiliations
Niloy K. Dutta, Univ. of Connecticut (United States)
Niloy Choudhury, Univ. of Connecticut (United States)
Guanghao Zhu, Univ. of Connecticut (United States)
Hong Cong, Univ. of Connecticut (United States)


Published in SPIE Proceedings Vol. 5246:
Active and Passive Optical Components for WDM Communications III
Achyut K. Dutta; Abdul Ahad S. Awwal; Niloy K. Dutta; Kazuo Fujiura, Editor(s)

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