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Proceedings Paper

Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots
Author(s): Timur M. Burbaev; I. P. Kazakov; Vadim A. Kurbatov; M. M. Rzaev; V. I. Vdovin
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Paper Abstract

Heterostructure with InxGa1-xAs quantum dots on Si (001) substrate was grown by molecular beam epitaxy (MBE). Step graded Si-Si1-xGex-Ge buffer layers and InxGa1-xAs quantum dots (QDs) in GaAs matrix were deposited consecutively in two different MBE systems. Optical and structural characterizations of heterostructure were performed by photoluminescence (PL) at 77K and 300 K and transmission electron microscopy (TEM), respectively. Si-Si1-xGex-GaAs heterostructure with InGaAs QDs exhibited intense photoluminescence in range 1.3 μm at room temperature.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513625
Show Author Affiliations
Timur M. Burbaev, P.N. Lebedev Physical Institute (Russia)
I. P. Kazakov, P.N. Lebedev Physical Institute (Russia)
Vadim A. Kurbatov, P.N. Lebedev Physical Institute (Russia)
M. M. Rzaev, P.N. Lebedev Physical Institute (Russia)
V. I. Vdovin, Institute for Chemical Problems of Microelectronics (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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