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Proceedings Paper

Hole transport in Ge/Si quantum dot field-effect transistors
Author(s): Andrei I. Yakimov; A. V. Dvurechenskii; V. V. Kirienko; Alexander I. Nikiforov
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Paper Abstract

We report on the transport properties of Si field-effect transistors with an array of approximately 103 10-nm-diameter Ge self-assembled quantum dots embedded into the active channel. The drain current versus gate voltage characteristics show oscillations caused by Coulomb interaction of holes in the fourfold-degenerate excited state of the dots even at room temperature. A dot charging energy of approximately 43 meV (i.e., > kT = 26 meV at T = 300 K) and disorder energy of approximately 20 meV are determined from the oscillation period ad the temperature dependence sudy of current maxima, respectively.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513622
Show Author Affiliations
Andrei I. Yakimov, Institute of Semiconductor Physics (Russia)
A. V. Dvurechenskii, Institute of Semiconductor Physics (Russia)
V. V. Kirienko, Institute of Semiconductor Physics (Russia)
Alexander I. Nikiforov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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