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Proceedings Paper

Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 μm wavelength range
Author(s): Yu. N. Drozdov; Z. F. Krasil'nik; D. N. Lobanov; A. V. Novikov; Mikhail Ya. Valakh; N. V. Vostokov; A. N. Yablonsky; V. A. Yukhymchuk
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Paper Abstract

The dependence of photoluminescence spectra of SiGe/Si(001) structures with self-assembled islands on Ge deposition temperature was investigated. Due to inhibition of SiGe alloying and an increase of the Ge content in islands the photoluminescence peak from the islands significantly shifted to low energy with a lowering temperature. The maximum of the peak from the island grown at 600°C was observed at energies less than the energy of the bandgap for bulk Ge. As a result of holes localization in islands the photoluminescence peak from the islands was observed up to room temperature. Sufficient enhancement of the room-temperature intensity of the photoluminescence signal at 1.55 μm was obtained for structures with islands grown on pre-deposited Si1-xGex layer. It is associated with a more effective capturing of holes by densely packed islands in structures with a pre-deposited Si1-xGex layer.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513596
Show Author Affiliations
Yu. N. Drozdov, Institute for Physics of Microstructures (Russia)
Z. F. Krasil'nik, Institute for Physics of Microstructures (Russia)
D. N. Lobanov, Institute for Physics of Microstructures (Russia)
A. V. Novikov, Institute for Physics of Microstructures (Russia)
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
N. V. Vostokov, Institute for Physics of Microstructures (Russia)
A. N. Yablonsky, Institute for Physics of Microstructures (Russia)
V. A. Yukhymchuk, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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