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Proceedings Paper

Optical bonding of high-refractive-index semiconductors using index-matched chalcogenide glass
Author(s): Euan J McBrearty; Paul Mason; David Orchard; Michael Harris; Keith Lewis
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Paper Abstract

A technique for bonding semiconductor optics is described. A thin film of chalcogenide glass is sputtered onto each surface to be bonded. The sputtered films are then placed in close contact and heated at low temperature under pressure to cause them to fuse. With careful choice of materials the resulting interface is virtually invisible. The technique has been demonstrated with gallium arsenide plates. A quaternary chalcogenide glass has been developed with a refractive index within 3% of that of gallium arsenide (3.34 @ 2.07μm). The glass sputters with no change in composition onto the surfaces of the plates to be bonded. Heat treatment at less than 200°C results in an interface with an optical absorption of less than 0.1% measured using a laser calorimeter operating at 2.07μm. The absorption of the structure was similar to that of an equivalent single piece of gallium arsenide.

Paper Details

Date Published: 25 February 2004
PDF: 9 pages
Proc. SPIE 5250, Advances in Optical Thin Films, (25 February 2004); doi: 10.1117/12.513577
Show Author Affiliations
Euan J McBrearty, QinetiQ Ltd. (United Kingdom)
Paul Mason, QinetiQ Ltd. (United Kingdom)
David Orchard, QinetiQ Ltd. (United Kingdom)
Michael Harris, QinetiQ Ltd. (United Kingdom)
Keith Lewis, QinetiQ Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 5250:
Advances in Optical Thin Films
Claude Amra; Norbert Kaiser; H. Angus Macleod, Editor(s)

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