Share Email Print
cover

Proceedings Paper

Low noise telcommunications APDs
Author(s): Archie L. Holmes; Joe C. Campbell; Xiaoguang Sun; Shuling Wang; Rubin Sidhu; Xiaoguang G. Zheng; Xiaowei Li
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Avalanche Photodiodes (APDs) are key components in modern lightwave communications systems. When compared to p-i-n diodes, APDs provide internal gain via impact ionization which leads to higher sensitivity. In addition, with proper device design, high gain bandwidth products can also be achieved. In this paper, we describe our work in making high speed, low noise APDs - operating at 1300 - using GaAs based multiplication regions. Our results to date have lead to a resonant cavity enhanced (RCE) APD, operating at 1310 nm, with an external quantum efficiency of 36% and an effective k factor of 0.1.

Paper Details

Date Published: 8 December 2003
PDF: 11 pages
Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.512954
Show Author Affiliations
Archie L. Holmes, Univ. of Texas/Austin (United States)
Joe C. Campbell, Univ. of Texas/Austin (United States)
Xiaoguang Sun, 3M Electronics and Inorganics Technology Ctr. (United States)
Shuling Wang, Univ. of Texas/Austin (United States)
Rubin Sidhu, Univ. of Texas/Austin (United States)
Xiaoguang G. Zheng, Univ. of Texas/Austin (United States)
Xiaowei Li, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 5248:
Semiconductor Optoelectronic Devices for Lightwave Communication
Joachim Piprek, Editor(s)

© SPIE. Terms of Use
Back to Top