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Proceedings Paper

Photodetector with giant internal current amplification: experiment and numerical calculated model
Author(s): Aleksandr Malik; Volodymyr Grimalsky; Alfonso Jacome Torres; Carlos Zuniga; D. Durini
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Paper Abstract

New silicon based optical sensors with a metal - insulator - semiconductor structure (MIS) are developed and investigated both theoretically and experimentally. The physical properties of these sensors are described with a model of MIS capacitor where a presence of depletion layer of electrons and an inversion layer of holes of a finite depth is taken into account. Two-level voltage bias provides a transient between two quasi-equilibrium inversion modes. This transient is applied both for storage and for readout of the input optical signal for quantitative measurements of a weak infra red radiation. Proposed simple readout procedure provides reading the integrated information with a significant amplification. The amplification (or the current transformation coefficient) is determined by the ratio of integration and readout times and it may exceed 104. A theoretical model is given to explain a behavior of the sensor under storage by thermo generated carries and by photo generated ones jointly. Numerical simulations are of an agreement with experimental investigations of proposed sensors.

Paper Details

Date Published: 19 February 2004
PDF: 12 pages
Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); doi: 10.1117/12.512861
Show Author Affiliations
Aleksandr Malik, Instituto Nacional de Astrofisica Optica y Electronica (Mexico)
Volodymyr Grimalsky, Instituto Nacional de Astrofisica Optica y Electronica (Mexico)
Alfonso Jacome Torres, Instituto Nacional de Astrofisica Optica y Electronica (Mexico)
Carlos Zuniga, Instituto Nacional de Astrofisica Optica y Electronica (Mexico)
D. Durini, Instituto Nacional de Astrofísica Optica y Electronica (Mexico)

Published in SPIE Proceedings Vol. 5251:
Detectors and Associated Signal Processing
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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