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Proceedings Paper

Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM
Author(s): Yuanda Cheng; J. Liu; M. B. Stearns; Daniel Gorman Stearns
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Paper Abstract

Two different electron microscopy techniques were used to study a Ru/Si multilayer (ML) film. The structure of the multilayer was characterized by high-resolution electron microscopy (HREM). The multilayer compositional profile and its thermal stability were studied by using high-angle annular dark-field (HAADF) microscopy. Initially, the Ru/Si ML was found to have a well-defined multilayer structure. After annealing of the sample at 150 degree(s)C for 30 minutes, we observed that the Ru and Si layers were highly interdiffused with large Ru silicide crystals being formed in the multilayer film.

Paper Details

Date Published: 1 January 1992
PDF: 9 pages
Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); doi: 10.1117/12.51278
Show Author Affiliations
Yuanda Cheng, Arizona State Univ. (United States)
J. Liu, Arizona State Univ. (United States)
M. B. Stearns, Arizona State Univ. (United States)
Daniel Gorman Stearns, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1547:
Multilayer Optics for Advanced X-Ray Applications
Natale M. Ceglio, Editor(s)

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