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Proceedings Paper

Broadband semiconductor optical amplifiers and tunable semiconductor lasers
Author(s): Ching-Fuh Lin; Yi-Shin Su; Fei-Hung Chu; Chia-Wei Tsai
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Paper Abstract

Nonidentical multiple quantum wells (MQWs) had been widely used for broadening the emission or gain bandwidth of semiconductor optical amplifiers (SOAs). However, the carrier distribution among the MQWs is not uniform, leading to nonuniform gain contributed from different QWs. Thus using nonidentical MQWs for broadband purpose is not intuitively straightforward. Several factors need to be carefully considered. Those factors include the QW sequence, electron/hole transport time across the separate confinement hetero-structure, as well as carrier capture time. In this work, we will discuss the design of MQWs for broadband SOAs. With properly designed nonidentical MQWs, the emission bandwidth could be nearly 400 nm. Also, the tuning range of semiconductor lasers could be extended to be over 200 nm.

Paper Details

Date Published: 8 December 2003
PDF: 9 pages
Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.512588
Show Author Affiliations
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Fei-Hung Chu, National Taiwan Univ. (Taiwan)
Chia-Wei Tsai, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5248:
Semiconductor Optoelectronic Devices for Lightwave Communication
Joachim Piprek, Editor(s)

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