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Proceedings Paper

Design issues for high-speed electro-optic modulators
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Paper Abstract

The effect of velocity matching, impedance matching, conductor loss and dielectric loss on the optical bandwidth is reported for Lithium Niobate and GaAs electro-optic modulators by using rigorous numerical techniques. It is shown that by etching Lithium Niobate the switching voltage and bandwidth can be improved and similarly by using a higher aluminium content in the buffer layer the device length for a given optical loss can be shortened. It is also observed that the dielectric loss and impedance matching play a key role in velocity matched high-speed modulators with low conductor loss. Finally it is indicated that by using tantalium pentoxide coating, velocity matching can be achieved for GaAs modulators.

Paper Details

Date Published: 14 August 2003
PDF: 12 pages
Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); doi: 10.1117/12.512514
Show Author Affiliations
B. M. Azizur Rahman, City Univ. London (United Kingdom)
Shyqyri Haxha, City Univ. London (United Kingdom)
S. S. A. Obayya, City Univ. London (United Kingdom)
Kenneth T. V. Grattan, City Univ. London (United Kingdom)

Published in SPIE Proceedings Vol. 5246:
Active and Passive Optical Components for WDM Communications III
Achyut K. Dutta; Abdul Ahad S. Awwal; Niloy K. Dutta; Kazuo Fujiura, Editor(s)

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