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Proceedings Paper

Electroabsorption modulators integrated with DFB lasers based on identical active double-stack MQW-layer structure with high-frequency performance
Author(s): Bernhard Stegmueller; Christian Hanke
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Paper Abstract

Electro optic modulators are key components for fiber optic transmission at data rates exceeding 10Gbit/s. The monolithic integration of an electroabsorption (EA) modulator applying the quantum confined stark effect with a distributed feedback (DFB) laser diode was demonstrated using a novel approach based on a double-stack multiple quantum well (MQW) structure. This novel approach using an identical MQW layer structure for both devices, the DFB laser diode and the EA modulator, will be described and discussed. Recently, a maximum 3dB-cutoff frequency of 25 GHz was measured. Further experimental results obtained from devices operating at 1.3 µm and 1.55 µm, respectively, exhibit the potential of these devices for high-speed data rate transmission.

Paper Details

Date Published: 8 December 2003
PDF: 10 pages
Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.512488
Show Author Affiliations
Bernhard Stegmueller, Infineon Technologies AG (Germany)
Christian Hanke, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5248:
Semiconductor Optoelectronic Devices for Lightwave Communication
Joachim Piprek, Editor(s)

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