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Proceedings Paper

Wafer-bonded VCSELs with tunnel junctions
Author(s): Manish Mehta; Vijay Jayaraman; Andrew Jackson; Shaomin Wu; Yae Okuno; Joachim Piprek; John E. Bowers
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Paper Abstract

We introduce a scheme incorporating wafer bonding and tunnel junctions to improve the performance long-wavelength Vertical Cavity Surface Emitting Lasers (VCSELs). Through careful design of PL-mode offset, mirror reflectivity, and aperture definition, we achieve lasing to 134°C, output power above 2 mW, single-mode output power at 80°C above 1 mW, and differential efficiencies of 46%. We achieve lasing at wavelengths as high as 1336 nm and show a versatile design that can be applied to any VCSEL functioning at long wavelengths.

Paper Details

Date Published: 8 December 2003
PDF: 8 pages
Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.511773
Show Author Affiliations
Manish Mehta, Univ. of California/Santa Barbara (United States)
Vijay Jayaraman, Univ. of California/Santa Barbara (United States)
Andrew Jackson, Univ. of California/Santa Barbara (United States)
Shaomin Wu, Univ. of California/Santa Barbara (United States)
Yae Okuno, Univ. of California/Santa Barbara (United States)
Joachim Piprek, Univ. of California/Santa Barbara (United States)
John E. Bowers, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 5248:
Semiconductor Optoelectronic Devices for Lightwave Communication
Joachim Piprek, Editor(s)

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