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Proceedings Paper

Influence of high excitation on excitonic states in GaN/AlGaN quantum wells
Author(s): D. K. Nelson; M. A. Jacobson; Nicolas Grandjean; J. Massies; P. Bigenwald; Alexey V. Kavokin
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Paper Abstract

Photoluminescence of GaN/AlGaN quantum well structures was studied under high intensity of excitation. The blue shift of photoluminescence peak energy was observed when excitation intensity increased. The blue shift was most prominent for the wide wells, becoming smaller with decreasing the well width. We attribute the observed effect to the screening of the built-in electric field by photoexcited carriers, which leads to reducing of the initial red shift caused by the quantum confined Stark effect. The variation of exciton binding energy with carrier concentration also makes the contribution to the blue shift. The theoretical calculations of the blue shift were performed and compared with experimental data.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511535
Show Author Affiliations
D. K. Nelson, A.F. Ioffe Physico-Technical Institute (Russia)
M. A. Jacobson, A.F. Ioffe Physico-Technical Institute (Russia)
Nicolas Grandjean, Ctr. de Recherche sur I'Hetero-Epitaxie et ses Applications-CNRS (France)
J. Massies, Ctr. de Recherche sur I'Hetero-Epitaxie et ses Applications-CNRS (France)
P. Bigenwald, Univ. Blaise Pascal Clermont II-CNRS (France)
Alexey V. Kavokin, Univ. Blaise Pascal Clermont II-CNRS (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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