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Proceedings Paper

Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy
Author(s): M. Garcia-Rocha; Isaac Hernandez-Calderon
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Paper Abstract

CdTe ultra-thin quantum wells (UTQWs) within ZnTe barriers were grown by pulsed beam epitaxy (PBE) on GaAs(001) substrates. In-situ reflection high energy electron diffraction (RHEED) patterns and real-time spot intensity measurements indicated a high structural quality of the QWs. Low temperature photoluminescence (PL) experiments indicated a clear influence of the growth temperature on the structural properties of the samples. The 2 monolayer (ML) thick UTQW grown at Ts = 270°C exhibited an intense and sharp peak at 2.26 eV whereas the 4 ML thick UTQW (Ts = 290°C) presented an intense peak at 2.13 eV and a weak one around 2.04 eV. This behavior is discussed in terms of Cd re-evaporation at the higher Ts.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511513
Show Author Affiliations
M. Garcia-Rocha, Ctr. de Investigacion y de Estudios Avanzados del IPN (Mexico)
Isaac Hernandez-Calderon, Ctr. de Investigacion y de Estudios Avanzados del IPN (Mexico)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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