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Proceedings Paper

High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures
Author(s): V. V. Strelchuk; Mikhail Ya. Valakh; M. V. Vuychik; S. V. Ivanov; Petr S. Kop'ev; T. V. Shubina
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Paper Abstract

The intensive up-conversion photoluminescence (UPL) was observed at low temperatures in CdSe/ZnSe structures with single CdSe inserts of a nominal thickness of 1.5 and 0.6 ML. The quadratic-like dependence of UPL intensity on the excitation power was obtained. UPL mechanism was interpreted on the basis of non-linear process of two-step two-photon absorption (TS-TPA) through deep defect states including cation vacancies localized at the barier-nanoisland heterointerface.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511505
Show Author Affiliations
V. V. Strelchuk, Institute of Semiconductor Physics (Ukraine)
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
M. V. Vuychik, Institute of Semiconductor Physics (Ukraine)
S. V. Ivanov, A.F. Ioffe Physico-Technical Institute (Russia)
Petr S. Kop'ev, A.F. Ioffe Physico-Technical Institute (Russia)
T. V. Shubina, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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