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Proceedings Paper

Band gap of hexagonal InN and InGaN alloys
Author(s): V. Yu. Davydov; A. A. Klochikhin; Vadim V. Emtsev; A. V. Sakharov; S. V. Ivanov; V. A. Vekshin; Friedhelm Bechstedt; J. Furthmueller; Jochen Aderhold; Jurgen Graul; A. V. Mudryi; H. Harima; A. Hashimoto; A. Yamamoto; J. Wu; Henning Feick; Eugene E. Haller
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Paper Abstract

We present results of photoluminescence studies of the band gap of non-intentionally doped single-crystalline hexagona InN layers and In-rich InxGa1-xN alloy layers (0.36 < x < 1). The band gap of InN is found to be close to 0.7 eV. This is much smaller than the values of 1.8 eV to 2.1 eV cited in the current literature. A bowing parameter of b ≈ 2.5 eV allows one to reconcile our and the literature data for the band gap values of InxGa1-xN alloys in the entire composition region.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511325
Show Author Affiliations
V. Yu. Davydov, A.F. Ioffe Physico-Technical Institute (Russia)
A. A. Klochikhin, A.F. Ioffe Physico-Technical Institute (Russia)
Vadim V. Emtsev, A.F. Ioffe Physico-Technical Institute (Russia)
A. V. Sakharov, A.F. Ioffe Physico-Technical Institute (Russia)
S. V. Ivanov, A.F. Ioffe Physico-Technical Institute (Russia)
V. A. Vekshin, A.F. Ioffe Physico-Technical Institute (Russia)
Friedhelm Bechstedt, Friedrich-Schiller-Univ. Jena (Germany)
J. Furthmueller, Friedrich-Schiller-Univ. Jena (Germany)
Jochen Aderhold, Univ. Hannover (Germany)
Jurgen Graul, Univ. Hannover (Germany)
A. V. Mudryi, Institute of Solid State and Semiconductor Physics (Belarus)
H. Harima, Kyoto Institute of Technology (Japan)
A. Hashimoto, Fukui Univ. (Japan)
A. Yamamoto, Fukui Univ. (Japan)
J. Wu, Univ. of California/Berkeley (United States)
Henning Feick, Univ. of California/Berkeley (United States)
Ctr. of Advanced European Studies and Research (Germany)
Eugene E. Haller, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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