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Proceedings Paper

Investigation of the formation of InAs QDs in a AlGaAs matrix
Author(s): D. S. Sizov; N. V. Kryzhanovskaya; A. G. Gladyshev; Yu B. Samsonenko; G. E. Cirlin; N. K. Polyakov; V. A. Egorov; A. A. Tonkih; Yu G. Musikhin; Anrei F. Tsatsul'nikov; N. N. Ledentsov; Victor M. Ustinov
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Paper Abstract

Optical and structural properties of self organized InGaAs quantum dots (QD), deposited in Al0.3Ga0.7As matrix, were investigated. Samples were grown by molecular-beam epitaxy (MBE). It is shown, that deposition of 1.7 - 4 monolayer of InAs on Al0.3Ga0.7As surface results in formation of nanoscale QDs on 1 - 2 monolayer thick wetting layer (Stranski-Krastanov growth mode). Large exciton localization energy of the InAs QDs in Al0.3Ga0.7As in compare with QDs in GaAs is demonstrated. This is due to increase in size of these QDs and significant bandgap offset in the case of InAs/AlGaAs system in compare with InAs/GaAs one.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511241
Show Author Affiliations
D. S. Sizov, A.F. Ioffe Physico-Technical Institute (Russia)
N. V. Kryzhanovskaya, A.F. Ioffe Physico-Technical Institute (Russia)
A. G. Gladyshev, A.F. Ioffe Physico-Technical Institute (Russia)
Yu B. Samsonenko, A.F. Ioffe Physico-Technical Institute (Russia)
G. E. Cirlin, A.F. Ioffe Physico-Technical Institute (Russia)
N. K. Polyakov, A.F. Ioffe Physico-Technical Institute (Russia)
V. A. Egorov, A.F. Ioffe Physico-Technical Institute (Russia)
A. A. Tonkih, A.F. Ioffe Physico-Technical Institute (Russia)
Yu G. Musikhin, A.F. Ioffe Physico-Technical Institute (Russia)
Anrei F. Tsatsul'nikov, A.F. Ioffe Physico-Technical Institute (Russia)
N. N. Ledentsov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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