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Proceedings Paper

High-mobility InAs/AlSb heterostructures for spintronics applications
Author(s): Yuri G. Sadofyev; Y. Cao; S. Chaparro; A. Ramamoorthy; B. Naser; J. P. Bird; S. R. Johnson; Y.-H. Zhang
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Paper Abstract

High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical AlSb and Al0.8Ga0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510557
Show Author Affiliations
Yuri G. Sadofyev, P.N. Lebedev Physical Institute (Russia)
Y. Cao, Arizona State Univ. (United States)
S. Chaparro, Arizona State Univ. (United States)
A. Ramamoorthy, Arizona State Univ. (United States)
B. Naser, Arizona State Univ. (United States)
J. P. Bird, Arizona State Univ. (United States)
S. R. Johnson, Arizona State Univ. (United States)
Y.-H. Zhang, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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