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Proceedings Paper

Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces
Author(s): Alexander I. Nikiforov; V. A. Cherepanov; Oleg P. Pchelyakov
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Paper Abstract

Variations in the lattice constant of Ge film were determined by RHEED in the course of the MBE film growth on the silicon surface. Oscillations of the in-plane atomic cell constant were observed for the Ge film growing according to the 2D mechanism. Variations in the two-dimensional lattice constant at the stage of 2D growth are caused by elastic deformation of edges of two-dimensional islands. It was shown that the germanium film growth on silica, unlike the growth on the pure silicon surface, proceeds without formation of the wetting layer.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510552
Show Author Affiliations
Alexander I. Nikiforov, Institute of Semiconductor Physics (Russia)
V. A. Cherepanov, Institute of Semiconductor Physics (Russia)
Oleg P. Pchelyakov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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