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Proceedings Paper

Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures
Author(s): D. Litvinov; A. Rosenauer; D. Gerthsen; P. Kratzert; Michael Rabe; Fritz Henneberger
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Paper Abstract

The morphology and Cd distribution in CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy is compared before and after the ZnSe cap layer deposition. Atomic force microscopy is applied to study the surface topography of uncapped samples without removing the samples from the ultra-high vacuum. The capped structures are analyzed by transmission electron microscopy. It is observed that only a highly specific growth procedure involving a thermal activation step leads to a Stranski-Krastanow morphology with three-dimensional CdSe islands on a thin wetting layer which are preserved after the overgrowth with ZnSe.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510547
Show Author Affiliations
D. Litvinov, Univ. Karlsruhe (Germany)
A. Rosenauer, Univ. Karlsruhe (Germany)
D. Gerthsen, Univ. Karlsruhe (Germany)
P. Kratzert, Humboldt Univ. (Germany)
Michael Rabe, Humboldt Univ. (Germany)
Fritz Henneberger, Humboldt Univ. (Germany)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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