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Proceedings Paper

The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy
Author(s): N. V. Kryzhanovskaya; A. G. Gladyshev; D. S. Sizov; Alexey R. Kovsh; Anrei F. Tsatsul'nikov; Jim Y. Chi; Jyh-Shyang Wang; Li-Chung Wei; Victor M. Ustinov
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Paper Abstract

Optical properties of GaAsN/GaAs heterostructures with different N contents grown by molecular-beam epitaxy were investigated. We show that under the certain grows reigmes the optical properties of the GaAsN layers are determined by recombination via localized states which is due to composition fluctuation. An increase in the N concentration leads to increase in composition fluctuation and, correspondingly, to increase in energy of localized states. Thermal annealing reduces nonuniformity distribution of nitrogen atoms. In short-period GaAsN/GaAs superlattice the effects of phase separation can be enhanced.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510522
Show Author Affiliations
N. V. Kryzhanovskaya, A.F. Ioffe Physico-Technical Institute (Russia)
A. G. Gladyshev, A.F. Ioffe Physico-Technical Institute (Russia)
D. S. Sizov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Anrei F. Tsatsul'nikov, A.F. Ioffe Physico-Technical Institute (Russia)
Jim Y. Chi, Industrial Technology Research Institute (Taiwan)
Jyh-Shyang Wang, Industrial Technology Research Institute (Taiwan)
Li-Chung Wei, Industrial Technology Research Institute (Taiwan)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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