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Proceedings Paper

2D-3D growth mode transition through Stranski-Krastanov mode during epitaxial growth
Author(s): D. V. Brunev; A. N. Karpov; I. G. Neizvestny; Natalia L. Shwartz; Zoja Sh. Yanovitskaya
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Paper Abstract

Using a kinetic Monte Carlo model atomic interlayer exchange influence on the Stranski-Krastsnov (SK) growth mode was investigated. With the increase of the deposited dose, transition from 2D to 3D growth mode within SK region without changing interlayer exchange and the growth parameters, was observed. Limit parameter values corresponding to 2D yields SK and SK yields 3D transitions were determined.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510515
Show Author Affiliations
D. V. Brunev, Institute of Semiconductor Physics (Russia)
A. N. Karpov, Institute of Semiconductor Physics (Russia)
I. G. Neizvestny, Institute of Semiconductor Physics (Russia)
Natalia L. Shwartz, Institute of Semiconductor Physics (Russia)
Zoja Sh. Yanovitskaya, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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