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Proceedings Paper

Nanostructures in porous substrate for mismatched film technology and lateral growth model
Author(s): A. V. Bobyl; S. G. Konnikov; D. V. Shantsev; A. A. Sitnikova; Robert A. Suris; V. P. Ulin
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Paper Abstract

A porous GaAs (100) substrate was prepared with nanoscale (5 - 20 nm) surface roughness, 108 cm-2 density of nanoscale inlet holes at the surface, and a network of pores (20 - 100 nm) along [111] on the 50 - 100 nm depth. The lattice misfit of the heterostructure GaSb/GaAs with the porous substrate was 22% less than that for the same rigid substrate. The structure of pores is discussed in connection with possible electrochemical processes of pore formation in A3B5 materials. The initial stage of growth has been analyzed assuming a strain dependence of the lateral growth rate at the side film/pore interface. This dependence accounts for the formation of bridges over the pores followed by a smooth growth of continuous film. Using a strain distribution calculated for a model heterostructure of two mismatched layers with pores we estimated the dynamics of bridging and evolution of the crystallization front.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510505
Show Author Affiliations
A. V. Bobyl, A.F. Ioffe Physico-Technical Institute (Russia)
S. G. Konnikov, A.F. Ioffe Physico-Technical Institute (Russia)
D. V. Shantsev, A.F. Ioffe Physico-Technical Institute (Russia)
A. A. Sitnikova, A.F. Ioffe Physico-Technical Institute (Russia)
Robert A. Suris, A.F. Ioffe Physico-Technical Institute (Russia)
V. P. Ulin, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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