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Proceedings Paper

Development of GaInNAs-based 1.3-µm VCSEL
Author(s): Arun Ramakrishnan; G. Ebbinghaus; A. Lima; D. Supper; Guenter Kristen; M. Popp; C. Degen; H.-L. Althaus; T. Killer; R. Scholz; M. Melinde; M. Sauter; M. Weigert; Henning Riechert; Gunther Steinle
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Paper Abstract

In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.

Paper Details

Date Published: 8 December 2003
PDF: 8 pages
Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); doi: 10.1117/12.510463
Show Author Affiliations
Arun Ramakrishnan, Infineon Technologies AG (Germany)
G. Ebbinghaus, Infineon Technologies AG (Germany)
A. Lima, Infineon Technologies AG (Germany)
D. Supper, Infineon Technologies AG (Germany)
Guenter Kristen, Infineon Technologies AG (Germany)
M. Popp, Infineon Technologies AG (Germany)
C. Degen, Infineon Technologies AG (Germany)
H.-L. Althaus, Infineon Technologies AG (Germany)
T. Killer, Infineon Technologies AG (Germany)
R. Scholz, Infineon Technologies AG (Germany)
M. Melinde, Infineon Technologies AG (Germany)
M. Sauter, Infineon Technologies AG (Germany)
M. Weigert, Infineon Technologies AG (Germany)
Henning Riechert, Infineon Technologies AG (Germany)
Gunther Steinle, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5248:
Semiconductor Optoelectronic Devices for Lightwave Communication
Joachim Piprek, Editor(s)

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