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Proceedings Paper

Microwave-assisted far-infrared photoconductivity in high-purity GaAs
Author(s): Jam Farhoomand; Robert E McMurray; David L Sisson; Christopher T Koerber
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Paper Abstract

We have observed, for the first time, microwave-assisted photoconductivity in high purity GaAs. The enhancement of response appears to be dictated by two distinct mechanisms. First, a broadband enhancement which is believed to be due to detrapping of the free carriers and, therefore, increased photoconductive gain. Secondly, microwave-ionization of the excited states. We expect that both of these mechanisms contribute very little, if any, to the detector noise and, therefore, improve the detector's NEP. In this paper, we report the results of our preliminary tests showing broadband enhancement in response and an indication of enhancement of the excited-state response. Further investigation is currently underway.

Paper Details

Date Published: 10 November 2003
PDF: 7 pages
Proc. SPIE 5152, Infrared Spaceborne Remote Sensing XI, (10 November 2003); doi: 10.1117/12.510383
Show Author Affiliations
Jam Farhoomand, TechnoScience Corp. (United States)
NASA Ames Research Ctr. (United States)
Robert E McMurray, NASA Ames Research Ctr. (United States)
David L Sisson, TechnoScience Corp. (United States)
NASA Ames Research Ctr. (United States)
Christopher T Koerber, TechnoScience Corp. (United States)
NASA Ames Research Ctr. (United States)

Published in SPIE Proceedings Vol. 5152:
Infrared Spaceborne Remote Sensing XI
Marija Strojnik, Editor(s)

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