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Proceedings Paper

Laser drilling vias in GaAs wafers
Author(s): Susan Riley; Larry A. Schick
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Paper Abstract

A new approach to drilling GaAs substrate vias in a production environment is described. Rapid drilling of vias in thinned wafers has been achieved with a frequency doubled Nd:YAG laser. A description of the equipment, laser parameters, and process is given. Production results are also shown.

Paper Details

Date Published: 1 December 1991
PDF: 3 pages
Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); doi: 10.1117/12.51032
Show Author Affiliations
Susan Riley, TriQuint Semiconductor, Inc. (United States)
Larry A. Schick, Electro Scientific Industries (United States)


Published in SPIE Proceedings Vol. 1598:
Lasers in Microelectronic Manufacturing
Bodil Braren, Editor(s)

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