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Proceedings Paper

Crystallization of Ge-doped AgInTeSb phase-change optical disk media
Author(s): Bo Liu; Hao Ruan; Fuxi Gan; Jing Chen
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Paper Abstract

Due to germanium doping in the AgInTeSb film, Ag2Te phase was formed at minor doping and disappeared when the germanium content was high, AgInTe2 phase changed into AgIn2 phase, and Ge2Sb2Te5 new crystalline phase appeared. The crystallization temperature of AgInTeSbGe increased manifestly with Ge addition. A doping amount of 4.1 at.% germanium increases the reflectivity contrast to be greater than 30% almost in the whole visible region.

Paper Details

Date Published: 9 April 2003
PDF: 4 pages
Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); doi: 10.1117/12.510311
Show Author Affiliations
Bo Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Hao Ruan, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)
Jing Chen, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 5060:
Sixth International Symposium on Optical Storage (ISOS 2002)
Fuxi Gan; Zuoyi Li, Editor(s)

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