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Proceedings Paper

Crystallization in eutectic materials of phase-change optical memory
Author(s): Masahiro Okuda; Hirokazu Inaba; Shouji Usuda
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Paper Abstract

For the materials of eutectic composition (AgInSbTe) using as the phase change optical memory, Sb rich recording layer have been utilized in order to the rapid crystallization. But, the mechanism of excess Sb addition has not been clear, because a eutectic material is thought to cause the phase separation in its solidification process. Recently, it was reported that a melt-quenched crystalline states of eutectic AgInSbTe and SbTe with excess Sb has a quasi-equilibrium sate with single phase hexagonal structure based Sb(R3m) and some Sb atoms are randomly replaced with Te atoms. In this paper, we report the excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films. This crystallization mechanism describe the propagation with high velocity in the interface separating the crystalline and amorphous phase for AgInSbTe and Ge(Sb..Te3)+Sb materials. From these analysis, it is clear that the crystallization is grown up in the boundary of amorphous-crystalline region of eutectic materials, which is different from the stoichiometric Ge2Sb2Te5 media. Under favorable conditions, a self sustained (explosive) process results by laser irradiation. Then, once crystallization has been initiated in the amorphous-crystalline region, the entire amorphous films has been crystallized.

Paper Details

Date Published: 9 April 2003
PDF: 5 pages
Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); doi: 10.1117/12.510288
Show Author Affiliations
Masahiro Okuda, Okuda Technical Office (Japan)
Hirokazu Inaba, Osaka Prefecture Univ. (Japan)
Shouji Usuda, Osaka Prefectural College of Technology (Japan)

Published in SPIE Proceedings Vol. 5060:
Sixth International Symposium on Optical Storage (ISOS 2002)
Fuxi Gan; Zuoyi Li, Editor(s)

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