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Proceedings Paper

Dynamics of the optical parameters of molten silicon during nanosecond laser annealing
Author(s): Johannes Boneberg; Oguz Yavas; B. Mierswa; Paul Leiderer
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Paper Abstract

The behavior of the reflectivity of a Si single crystal during irradiation with two successive Nd:YAG pulses is investigated with ns resolution. The first pulse melts the surface, and therefore the reflection coefficient increases to the value of the metallic liquid at the melting temperature. Upon further heating of the surface with the second pulse, we observe a decrease of the reflection coefficient, resulting from the temperature dependent dielectric function of the molten Si. The largest decrease in the reflectivity that could be reached before damaging the surface amounted to 9% for both wavelengths 633 nm and 488 nm.

Paper Details

Date Published: 1 December 1991
PDF: 7 pages
Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); doi: 10.1117/12.51028
Show Author Affiliations
Johannes Boneberg, Univ. Konstanz (Germany)
Oguz Yavas, Univ. Konstanz (Germany)
B. Mierswa, Univ. Konstanz (Germany)
Paul Leiderer, Univ. Konstanz (Germany)

Published in SPIE Proceedings Vol. 1598:
Lasers in Microelectronic Manufacturing
Bodil Braren, Editor(s)

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