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Proceedings Paper

Sm substitution effects on the magnetic and magneto-optical properties of TbCo/Cr films
Author(s): Zhixin Huang; Zuoyi Li; Gengqi Lin; Xiaofei Yang; Haomin Wang; Fang Jin; Xiaomin Cheng; Xiaohong Xu; Zheng Li
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Paper Abstract

In order to meet the requirements of high saturation magnetization (Ms) and large coercivity (Hc) at room temperature for hybrid recording, the TbCo/Cr films with perpendicular anisotropy were prepared by an r.f. magnetron sputtering system without applying bias voltage. The influence of sputtering conditions and the effects of Sm substitution on the magnetic and magneto-optical properties of TbCo/Cr films were studied. It was found that although the Hc of TbCo/Cr could be optimized by choosing suitable sputtering parameters, but the partial Tb substituted by Sm will directly affect the magnitude of saturation magnetization Ms and the Kerr rotation angle 0k. This can be explained with the feeri-magnetical structure of RE-TM alloy. Under the optimized sputtering conditions, when the magnetic layer composition was (Sm0.343Tb0.657)31Co69, the Ms as high as 385emu/cm3 and the Hc as high as 4.7KOe at room temperature were obtained.

Paper Details

Date Published: 9 April 2003
PDF: 4 pages
Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); doi: 10.1117/12.510256
Show Author Affiliations
Zhixin Huang, Huazhong Univ. of Science and Technology and Central China Normal Univ. (China)
Zuoyi Li, Huazhong Univ. of Science and Technology (China)
Gengqi Lin, Huazhong Univ. of Science and Technology (China)
Xiaofei Yang, Huazhong Univ. of Science and Technology (China)
Haomin Wang, Huazhong Univ. of Science and Technology (China)
Fang Jin, Huazhong Univ. of Science and Technology (China)
Xiaomin Cheng, Huazhong Univ. of Science and Technology (China)
Xiaohong Xu, Huazhong Univ. of Science and Technology (China)
Zheng Li, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5060:
Sixth International Symposium on Optical Storage (ISOS 2002)
Fuxi Gan; Zuoyi Li, Editor(s)

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