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Proceedings Paper

Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy
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Paper Abstract

A Focussed Ion beam Microscope has been used to image the grains as well voids formed in Al- 1%Cu/TiW fine line conductors . Void formation has been compared between laser annealed Al and non laser annealed Al and it has been shown that the laser annealed Al is more prone to voiding. A TiW layer placed over the Al is effective in suppressing the voids.

Paper Details

Date Published: 1 December 1991
PDF: 7 pages
Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51018
Show Author Affiliations
Dipankar Pramanik, VLSI Technology Inc. (United States)
Vivek Jain, VLSI Technology Inc. (United States)

Published in SPIE Proceedings Vol. 1596:
Metallization: Performance and Reliability Issues for VLSI and ULSI
Gennady Sh. Gildenblat; Gary P. Schwartz, Editor(s)

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