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Proceedings Paper

Spin-on glasses in the silicon IC: plague or panacea?
Author(s): Nadia Lifshitz; Mark R. Pinto
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Paper Abstract

Spin-On Glass (SOG) is used as a planarizing component of the interlevel dielectric in a multilevel integratedcircuit (IC). However, the presence of SOG may compromise IC performance due to water absorption. Several effects will be discussed in the present talk: "Poisoning" of contacts between two metallization levels. Accelerated hot-carrier aging of the MOS transistor.• Formation of mobile positive charge in the SOG layer. The magnitude of this charge may be high enough to invert the silicon surface.• Many-fold increase in the SOG dielectric constant and related increase in parasitic capacitance of the IC.

Paper Details

Date Published: 1 December 1991
PDF: 10 pages
Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51015
Show Author Affiliations
Nadia Lifshitz, AT&T Bell Labs. (United States)
Mark R. Pinto, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1596:
Metallization: Performance and Reliability Issues for VLSI and ULSI
Gennady Sh. Gildenblat; Gary P. Schwartz, Editor(s)

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