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Proceedings Paper

Technique of assessing contact ohmicity and their relevance to heterostructure devices
Author(s): H. Barry Harrison; Geoffrey K. Reeves
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Paper Abstract

This paper briefly reviews techniques to assess and model ohmic contacts between layers with finite conductivity. It is then extended to consider aspects of these models that are applicable to multilayer structures such as those found in high electron mobility transistors [HEMTS] and provides electrical models for these structures. Experimental results are included in some instances to provide insight into the magnitude of the parameters of the models.

Paper Details

Date Published: 1 December 1991
PDF: 8 pages
Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51011
Show Author Affiliations
H. Barry Harrison, Griffith Univ. (Australia)
Geoffrey K. Reeves, Royal Melbourne Institute of Technology (Australia)

Published in SPIE Proceedings Vol. 1596:
Metallization: Performance and Reliability Issues for VLSI and ULSI
Gennady Sh. Gildenblat; Gary P. Schwartz, Editor(s)

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