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Proceedings Paper

Fine structure characteristics of semiconductor laser diode coupled to an external cavity
Author(s): Ali Ghiasi; Anand Gopinath
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Paper Abstract

A semiconductor laser diode with a nominal relaxation oscillation frequency of 6 GHz with an anti-reflection coating on one facet is coupled to an external high Q cavity with the fundamental resonance set to 5 GHz. The laser diode is mounted in a custom microstrip fixture and is driven by a HP-8510A network analyzer. The experimental and theoretical results show enhancement greater than 25 dB at the external cavity resonance frequencies. The results also show holes near the resonance frequencies which may affect the useful bandwidth.

Paper Details

Date Published: 1 December 1991
PDF: 5 pages
Proc. SPIE 1583, Integrated Optical Circuits, (1 December 1991); doi: 10.1117/12.50909
Show Author Affiliations
Ali Ghiasi, Univ. of Minnesota (United States)
Anand Gopinath, Univ. of Minnesota (United States)


Published in SPIE Proceedings Vol. 1583:
Integrated Optical Circuits

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