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Surface photovoltage studies of porous silicon in presence of polluting gases: toward a selective gas sensor
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Paper Abstract

The work function of nano Porous Silicon (PS) has been studied by the kelvin probe method as a function of the exposure to different gaseous species. Characterisation has been performed n dark and in presence of sub band and supra band gap light Surface Photovoltage (SPV)measurements. Traces of ammonia and nitrogen dioxide change drastically the shape of SPV as a function of photon energy:light induces transitions from and to surface states produced by gas adsorption. The results foresee the possibility to improve semiconductor sensor selectivity by using monochromatic light at well defined frequency able to activate/deactivate surface states where species are adsorbed

Paper Details

Date Published: 14 November 2003
PDF: 9 pages
Proc. SPIE 5222, Nanocrystals, and Organic and Hybrid Nanomaterials, (14 November 2003); doi: 10.1117/12.509074
Show Author Affiliations
Guido Faglia, INFM (Italy)
Univ. degli Studi di Brescia (Italy)
Camilla Baratto, INFM (Italy)
Univ. degli Studi di Brescia (Italy)
Giorgio Sberveglieri, INFM (Italy)
Univ. degli Studi di Brescia (Italy)
Zeno Gaburro, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Lorenzo Pavesi, INFM (Italy)
Univ. degli Studi di Trento (Italy)

Published in SPIE Proceedings Vol. 5222:
Nanocrystals, and Organic and Hybrid Nanomaterials
Alexander N. Cartwright; David L. Andrews; Zeno Gaburro; Charles Y. C. Lee, Editor(s)

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