Share Email Print
cover

Proceedings Paper

CMOS infrared sensors with giant internal signal amplification
Author(s): Alexander I. Malik; Volodymyr Grimalsky
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Theoretical model of a new high-speed metal - insulator - semiconductor (MIS) radiation sensor possessing giant internal signal amplification is proposed to describe the experimentally obtained results. The sensor is fabricated on an Ultra-High Resistivity (UHR) Epi Layer (>10 kΩ cm) on a heavily doped wafer. Theoretical modeling explains the giant value of the internal amplification of the signal that is determined as the ratio of peak values of readout currents and instantaneous photo current. At the integration time about 1 sec the amplification coefficient is of the order of 104 in the case of the external load 10 - 50 kΩ, and it is of the order of 106 when the external load is smaller than 1 kΩ. The sensors operate under non-modulated radiation as well as under an optical signal modulation till 1 GHz.

Paper Details

Date Published: 6 February 2004
PDF: 10 pages
Proc. SPIE 5210, Ultrahigh- and High-Speed Photography, Photonics, and Videography, (6 February 2004); doi: 10.1117/12.508019
Show Author Affiliations
Alexander I. Malik, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)
Volodymyr Grimalsky, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)


Published in SPIE Proceedings Vol. 5210:
Ultrahigh- and High-Speed Photography, Photonics, and Videography
Donald R. Snyder, Editor(s)

© SPIE. Terms of Use
Back to Top